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Abstract and Manuscript Submission

Submitted abstracts will be judged according to the quality and originality of the work described. The corresponding author will be notified when a decision has been made. Accepted abstracts will be included in the proceedings, to be distributed at the symposium in electronic form, and indexed online.

Copyright Form

Please sign (electronic signature or other is fine) the Proceedings copyright form and email it to

isdrs16@gmail.com.

ISDRS PROCEEDINGS COPYRIGHT FORM

Abstract Format

The abstract is limited to two single-sided pages including all text, figures and references. To facilitate publication, please compose your abstract using the MS Word template provided here. Abstracts that do not conform to this template may be returned for revision. Student authors are requested to indicate “Student Paper” in the upper right corner of the first page of the abstract.  Invited speakers are also requested to indicate “Invited Paper” at the upper right corner of the first page of the abstract. Please also include a cover page with the abstract indicating title, author(s) names and affiliations, e mail addresses, and the name, affiliation, and e mail of the corresponding author as well as the topic and if an Oral or Poster presentation is desired. Abstracts with the cover page should be submitted in MS word format by e mail to:

isdrs16@gmail.com

Late Abstract submission deadline EXTENDED  to November 11!

MANUSCRIPT SUBMISSION FOR SOLID STATE ELECTRONICS

In addition to the two-page abstract submitted to the conference, authors may optionally submit a full manuscript to be considered for publication in a special issue of Solid State Electronics. Please submit your full length manuscript in pdf and doc format, along with a cover page with title, authors names, e mail, affiliations and the names of three (3) reviewers not affiliated with the Institution of the authors.

The full-length manuscripts should be submitted by e-mail to isdrs16@gmail.com

The deadline for manuscript submission is December 9, 11:59 PM Eastern Standard Time.

Please note that only the authors who attend the conference can submit a full-length paper to the Solid State Electronics Special Issue. An attendee may not submit more than two manuscripts without specific approval by the special issue editors. Manuscripts should have a length of 6 to 10 journal pages and must describe original, substantial work of high quality, suitable for the journal. Please note that papers that are clearly too short or too long will be rejected without review. All submitted manuscripts must comply with the publishing guidelines specified by Solid State Electronics: http://www.elsevier.com/journals/solid-state-electronics/0038-1101/guide-for-authors

Subject Areas

Original papers are solicited in the following areas:

  • Wide Bandgap Materials and Devices:
    • UV Emitters
    • Nitride Optoelectronics
    • Nitride HEMTs
    • GaN, ZnO materials and devices
    • Devise Physics and Characterization
    • SiC Materials and Devices
  • High Frequency Devices
  • High Power Electronics
  • Nanoelectronics: Novel devices
  • Nanoelectronics: 2D Materials and Memory
  • Low Power Electronics
  • Organic Materials and Devices
  • Quantum Transport
  • Organic Materials and Devices
  • SiGe and Germanium Devices
  • Modeling (Compact and Distributed) and Simulation
  • SOI Device Technology
  • Nanoelectronics: Nanotubes and Graphene
  • MEMS / NEMS
  • Space and Extreme Environment Electronics
  • Testing and Characterization
  • Sensors and Biosensors
  • Processing Technology
  • Nanowires: Methods and Devices
  • Nanowires: Core/shell heterostructures
  • Oxides and Dielectrics
  • Photovoltaics
  • Optics and Optoelectronics
  • Thermoelectrics (TE)
  • Plasmonics
  • Flexible/Stretchable Devices
  • Printed Electronics including 0D-, 1D-, 2D- structures