ISDRS 2016 will be held at the Hyatt Regency Hotel in Bethesda Maryland, December 7-9, 2016
Announcements
- Manuscript Submission Deadline Extended: January 31
- Lunch Thursday-Friday: Regency Ballroom III/IV
- Early Registration extended: November 16
- HOTEL REDUCED RATES EXTENDED TO DECEMBER 6!
- Late Abstract Deadline: November 16
- Technical Program Update as of November 25: Please Check.
- Poster Session Details: Poster size: 4’x4′.
- Optional Full-length manuscript versions of the accepted and presented papers may be submitted to be considered for publication in Solid State Electronics.
- The abstracts will be submitted in MS word format by e mail to isdrs16@gmail.com. Please include a cover page with title of paper, author(s) names, affiliations, e mails, underlining the corresponding author, the topic, preference for oral or poster presentation, and the word “student” or “invited” at the top right of page 1 of the abstract.
Symposium Information
The biennial International Semiconductor Device Research Symposium focuses on exploratory research in electronic and photonic materials and devices. Areas such as novel device concepts, processing technologies, advanced modeling, nanotechnology, nanoelectronics, wide band-gap semiconductors, MEMS materials and devices, oxides and dielectrics, organic and polymer opto-electronic materials and devices, ultra high frequency devices & RF effects, flexible and printed electronics, and high power-high temperature devices are included. The Symposium brings together diverse participants in multidisciplinary areas, and provides a forum for extended personal scientific interaction for engineers, scientists, and students working in the field of advanced electronic materials and device technologies.
Abstracts from the conference are published online. Presenters may optionally submit a full-length manuscript to be considered for publication in a special issue of Solid State Electronics
Plenary Speakers
- Manijeh Razeghi (Northwestern U): The Wonder of Nanotechnology
- Jay Lewis (DARPA): Advanced EO/IR Technologies at DARPA-MTO
Invited Speakers
Michael Shur (RPI): Ultimate Response Speed of Two Dimensional Electrons
Roger Helkey/John Bowers (UCSB): Silicon Photonic Integrated Circuits
Seth Hubbard (RIT):Bandgap Engineering and Radiation Effects in Nanostructured Multijunction Solar Cells
Robert Kaplar (Sandia): Ultra-Wide-Band AlGaN Power Electronic Devices
Zetian Mi (UMICH): III-Nitride Nanowire Arrays
Manos Tentzeris (Georgia Tech): Flexible & Origami Reconfigurable RF Modules for Sensing and Energy Harvesting
Gymama Slaughter (UMBC): Bioelectronics: Glucose Sensing
Benjamin Cook (Texas Instruments):Additive Manufacturing, Enabling a New Age of Semiconductor Integration
Marko Loncar (Harvard U): Diamond Nanoscale Photonics and Mechanics
Jacob Khurgin (JHU): Role of Plasmonics in Future Integrated Circuits
Simarjeet Saini (UWaterloo): Semiconductor Nanowires: Engineering Light at Nanoscale
Likun Shen (Transphorm): 650V GaN-on-Si Power Transistors
Joshua Pomeroy (NIST): Enriching and Purifying Silicon Epilayers for Quantum Information
Marko Tadjer (NRL): Metal-Insulator Transition in Atomic Layer Deposited VO2 Thin Films
Igor Smolyaninov (UMD): Hyperbolic Metamaterials
Albert Davidov (NIST): 2D Materials and Devices
Glenn Solomon (NIST/UMD): Single-Shot, Full Characterization of a Quantum Dot Single-Photon State
Shadi Shahedipour-Sandvik (SUNY Polytechnic Institute): III-V Nitrides
Zhenyu Li ( George Washington University): Flexible/Stretchable Electronics
Ramon Collazo (North Carolina State University): III-V Nitrides
Nathan Lazarus (US Army Research Laboratory): Stretchable Electronics
Jae-Hyun Ryou (University of Houston): Flexible Electronics
William Alan Doolittle (Georgia Tech): Single Phase InGaN Low Temperature Rapid MBE Growth
Behrang Hamadani (NIST):Spectral dependence of charge carrier lifetimes in silicon
Dirk Robert Englund (MIT): Atomic Color Centers in WBG’s: Quantum Memories, Sensors, Single Photon Sources
Michael Wraback (ARL):Expanding Spectral Range and Functionality of UV Optoelectronic Materials and Devices
Kartik Srinivasan (NIST): Nanophotonic Device Technologies for Integrated Quantum Photonics on a Si Platform
Emily Bittle (NIST): Complications in Organic Transistor Characterization
Dimitris Ioannou (GMU): Silicon on Insulator, the Enabling Technology for IoT Era
Srabanti Chowdhury (UC Davis): Power Conversion with Wide Bandgap Semiconductors
Alex Zaslavsky (Brown University): Sharp-switching tunneling FETs
Li Tao (Southeast University of China/UT Austin): 2D Atomic Sheets for Advanced Flexible-Wearable Nanoelectronics
Edo Waks (UMD): Highly Efficient Nano-Laser Using Colloidal Quantum Wells
Nadeem Mahadik (NRL): Extended Defects in SiC Epilayers and Methods for Mitigation
Minghu Pan (Huazhong University of Science and Technology (HUST): Novel 2D Semimetal WTe2
David Mountain (Lab for Physical Science): Neuromorphic Chips
Thomas Murphy (UMD): Plasmon Enhanced Nonlinear Optics in Graphene
Alex Zakhidov (Texas State U): Reliability of Perovskite Solar Cells
Man Hoi Wong (NICT-Japan): Ultra-Wide-Bandgap Gallium Oxide for Power MOSFETs
Matthew Pelton (UMBC): Semiconductor Nanoplatelets: A New Colloidal System for Low-Threshold Lasers
Volker Sorger (GWU): Attojoule Optoelectronics
Jeremy Munday (UMD): Hot Electron Photodetectors
Daniel Feezell (UNM):Nonpolar/Semipolar GaN/InGaN Core-Shell Nano LEDs Grown by Selective-Area MOCVD
William Shafarman (UDEL):Processes and Prospects for Cu(In,Ga)Se2-based Thin Film Photovoltaics
Daniel Hines (LPS): Printed Hybrid Electronics
Subject Areas
Original papers are solicited in the following areas:
- Wide Bandgap Materials and Devices:
- UV Emitters
- Nitride Optoelectronics
- Nitride HEMTs
- GaN, ZnO materials and devices
- Devise Physics and Characterization
- SiC Materials and Devices
- High Frequency Devices
- High Power Electronics
- Nanoelectronics: Novel devices
- Nanoelectronics: 2D Materials and Memory
- Low Power Electronics
- Organic Materials and Devices
- Quantum Transport
- Organic Materials and Devices
- SiGe and Germanium Devices
- Modeling (Compact and Distributed) and Simulation
- SOI Device Technology
- Nanoelectronics: Nanotubes and Graphene
- MEMS / NEMS
- Space and Extreme Environment Electronics
- Testing and Characterization
- Sensors and Biosensors
- Processing Technology
- Nanowires: Methods and Devices
- Nanowires: Core/shell heterostructures
- Oxides and Dielectrics
- Photovoltaics
- Optics and Optoelectronics
- Thermoelectrics (TE)
- Plasmonics
- Flexible/Stretchable Devices
- Printed Electronics including 0D-, 1D-, 2D- structures